Transparent pentacene-based photoconductor: high photoconductivity effect
Identifieur interne : 003624 ( Main/Repository ); précédent : 003623; suivant : 003625Transparent pentacene-based photoconductor: high photoconductivity effect
Auteurs : RBID : Pascal:11-0422458Descripteurs français
- Pascal (Inist)
- Pulvérisation faisceau ionique, Courant photoélectrique, Rayonnement UV, Photoconductivité, Tension polarisation, Caractéristique dynamique, Photoconducteur, Oxyde d'indium, Etain, Eclairement, Evaluation performance, Gain, Réponse dynamique, Electronique organique, Configuration top contact, Configuration bottom contact.
English descriptors
- KwdEn :
- Bias voltage, Bottom contact configuration, Dynamic characteristic, Dynamic response, Gain, Illumination, Indium oxide, Ion beam sputtering, Organic electronics, Performance evaluation, Photoconductivity, Photoconductor materials, Photoelectric current, Tin, Top contact configuration, Ultraviolet radiation.
Abstract
In this paper, the fabrication and characterisation of pentacene-based photoconductors using indium tin oxide electrodes obtained by ion beam sputtering are discussed. The photoelectric properties of pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were investigated. We have shown that the photocurrent was dependent on the wavelength, bias voltage and illumination side of the device. Moreover, we have demonstrated with transparent electrodes that the top contact configuration yields better performance compared to the bottom contact configuration. We obtained a maximum photoconductivity gain of approximately 3 x 103 and a faster dynamic response when the photoconductor with top contact geometry was illuminated with ultraviolet light from the semiconductor side (top illumination), with a photoconductivity estimated at 10-4 Ω-1 cm-1.
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Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Hijazi, F" uniqKey="Hijazi F">F. Hijazi</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Skaiky, A" uniqKey="Skaiky A">A. Skaiky</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Trigaud, T" uniqKey="Trigaud T">T. Trigaud</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Aldissi, M" uniqKey="Aldissi M">M. Aldissi</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0422458</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0422458 INIST</idno><idno type="RBID">Pascal:11-0422458</idno><idno type="wicri:Area/Main/Corpus">002884</idno><idno type="wicri:Area/Main/Repository">003624</idno></publicationStmt><seriesStmt><idno type="ISSN">1286-0042</idno><title level="j" type="abbreviated">EPJ, Appl. phys. : (Print)</title><title level="j" type="main">EPJ. Applied physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bias voltage</term><term>Bottom contact configuration</term><term>Dynamic characteristic</term><term>Dynamic response</term><term>Gain</term><term>Illumination</term><term>Indium oxide</term><term>Ion beam sputtering</term><term>Organic electronics</term><term>Performance evaluation</term><term>Photoconductivity</term><term>Photoconductor materials</term><term>Photoelectric current</term><term>Tin</term><term>Top contact configuration</term><term>Ultraviolet radiation</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pulvérisation faisceau ionique</term><term>Courant photoélectrique</term><term>Rayonnement UV</term><term>Photoconductivité</term><term>Tension polarisation</term><term>Caractéristique dynamique</term><term>Photoconducteur</term><term>Oxyde d'indium</term><term>Etain</term><term>Eclairement</term><term>Evaluation performance</term><term>Gain</term><term>Réponse dynamique</term><term>Electronique organique</term><term>Configuration top contact</term><term>Configuration bottom contact</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this paper, the fabrication and characterisation of pentacene-based photoconductors using indium tin oxide electrodes obtained by ion beam sputtering are discussed. The photoelectric properties of pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were investigated. We have shown that the photocurrent was dependent on the wavelength, bias voltage and illumination side of the device. Moreover, we have demonstrated with transparent electrodes that the top contact configuration yields better performance compared to the bottom contact configuration. We obtained a maximum photoconductivity gain of approximately 3 x 10<sup>3</sup> and a faster dynamic response when the photoconductor with top contact geometry was illuminated with ultraviolet light from the semiconductor side (top illumination), with a photoconductivity estimated at 10-<sup>4</sup> Ω<sup>-1</sup> cm<sup>-1</sup>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1286-0042</s0></fA01><fA03 i2="1"><s0>EPJ, Appl. phys. : (Print)</s0></fA03><fA05><s2>51</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transparent pentacene-based photoconductor: high photoconductivity effect</s1></fA08><fA11 i1="01" i2="1"><s1>EL AMRANI (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>LUCAS (B.)</s1></fA11><fA11 i1="03" i2="1"><s1>HIJAZI (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>SKAIKY (A.)</s1></fA11><fA11 i1="05" i2="1"><s1>TRIGAUD (T.)</s1></fA11><fA11 i1="06" i2="1"><s1>ALDISSI (M.)</s1></fA11><fA14 i1="01"><s1>LPSMS, FST Errachidia, BP 509, Boutalamine</s1><s2>Errachidia</s2><s3>MAR</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>XLIM UMR 6172-Université de Limoges/CNRS, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s2>33207.p1-33207.p4</s2></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26690</s2><s5>354000194802930140</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0422458</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>EPJ. Applied physics : (Print)</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this paper, the fabrication and characterisation of pentacene-based photoconductors using indium tin oxide electrodes obtained by ion beam sputtering are discussed. The photoelectric properties of pentacene under red (632 nm) and ultraviolet (365 nm) illuminations were investigated. We have shown that the photocurrent was dependent on the wavelength, bias voltage and illumination side of the device. Moreover, we have demonstrated with transparent electrodes that the top contact configuration yields better performance compared to the bottom contact configuration. We obtained a maximum photoconductivity gain of approximately 3 x 10<sup>3</sup> and a faster dynamic response when the photoconductor with top contact geometry was illuminated with ultraviolet light from the semiconductor side (top illumination), with a photoconductivity estimated at 10-<sup>4</sup> Ω<sup>-1</sup> cm<sup>-1</sup>.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Pulvérisation faisceau ionique</s0><s5>03</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Ion beam sputtering</s0><s5>03</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Pulverización haz iónico</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Courant photoélectrique</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Photoelectric current</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Rayonnement UV</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Ultraviolet radiation</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Radiación ultravioleta</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Photoconductivité</s0><s5>41</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Photoconductivity</s0><s5>41</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Fotoconductividad</s0><s5>41</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Tension polarisation</s0><s5>42</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Bias voltage</s0><s5>42</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Voltage polarización</s0><s5>42</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Caractéristique dynamique</s0><s5>43</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Dynamic characteristic</s0><s5>43</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Característica dinámica</s0><s5>43</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Photoconducteur</s0><s5>47</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Photoconductor materials</s0><s5>47</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Fotoconductor</s0><s5>47</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>61</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Indium oxide</s0><s5>61</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Indio óxido</s0><s5>61</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Etain</s0><s2>NC</s2><s2>FX</s2><s5>62</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Tin</s0><s2>NC</s2><s2>FX</s2><s5>62</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estaño</s0><s2>NC</s2><s2>FX</s2><s5>62</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Eclairement</s0><s5>63</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Illumination</s0><s5>63</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Alumbrado</s0><s5>63</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>64</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>64</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>64</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Gain</s0><s5>65</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gain</s0><s5>65</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Ganancia</s0><s5>65</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Réponse dynamique</s0><s5>66</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Dynamic response</s0><s5>66</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Respuesta dinámica</s0><s5>66</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Electronique organique</s0><s5>67</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Organic electronics</s0><s5>67</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Electrónica orgánica</s0><s5>67</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Configuration top contact</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Top contact configuration</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Configuration bottom contact</s0><s4>CD</s4><s5>97</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Bottom contact configuration</s0><s4>CD</s4><s5>97</s5></fC03><fN21><s1>290</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>IS-FOE09. 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